IRL5602S

Description：MOSFET P-CH 20V 24A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:b8f27cb737ef Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IRL5602S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 24A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRL5602S

Description：MOSFET P-CH 20V 24A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：42mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：44 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：1460 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：75W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRL5602S

IRL5602S

Single FETs, MOSFETs Overview

The IRL5602S is a P-channel HEXFET Power MOSFET manufactured by Infineon Technologies. It features a D2PAK surface-mount package with a drain-to-source breakdown voltage of -20V and a continuous drain current of -24A at 25°C case temperature. The device exhibits a maximum on-resistance of 0.075Ω at VGS=-2.5V and 0.042Ω at VGS=-4.5V. Thermal resistance from junction to case is 2.0°C/W, while junction-to-ambient is 40°C/W. It supports an operating junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced processing techniques for low on-resistance per silicon area
Features ruggedized device design with fast switching speed
Fully avalanche rated for reliable operation in inductive loads

Single FETs, MOSFETs Applications

High current applications requiring low internal connection resistance
Power infrastructure utilizing fifth-generation HEXFET technology
Surface mount power packages accommodating die sizes up to HEX-4

Single FETs, MOSFETs Procurement Notes

Verify the manufacturer origin as International Rectifier or Infineon Technologies depending on production date. Confirm the specific package variant matches the D2PAK/TO-263AB footprint requirements. Check datasheet revisions for any updates to thermal impedance curves or absolute maximum ratings before finalizing integration into the circuit design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring logic-level drive capability with VGS thresholds around -1.0V. Ensure the PCB layout accommodates the minimum recommended footprint to achieve the specified 40°C/W junction-to-ambient thermal resistance. Evaluate the single pulse avalanche energy rating if the application involves unclamped inductive switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family, known for combining low on-resistance with high switching speeds. The D2PAK package provides high power capability and low on-resistance compared to other existing surface mount packages. It is designed for efficient and reliable performance in a wide variety of power management applications.