IRLI3803PBF

Description：MOSFET N-CH 30V 76A TO220AB FP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:925311869873 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLI3803PBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 76A TO220AB FP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLI3803PBF

Description：MOSFET N-CH 30V 76A TO220AB FP
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：140 nC @ 4.5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：63W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB Full-Pak
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for IRLI3803PBF

IRLI3803PBF

Single FETs, MOSFETs Overview

The IRLI3803PBF is a third-generation HEXFET power MOSFET manufactured by Infineon Technologies. It features an N-channel silicon construction housed in a TO-220 Full-Pak package designed for through-hole mounting. The device supports a drain-source voltage of 30V and a continuous drain current of 76A at case temperature. Key electrical characteristics include a maximum on-resistance of 6 milliohms, a gate threshold voltage of 1V, and a total gate charge of 140nC at 4.5V. It operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive compatibility allows direct interfacing with standard logic devices such as TTL, CMOS, and low-voltage microprocessors.
Advanced process technology achieves ultra-low on-resistance per silicon area, enhancing overall switching efficiency.
Isolated package design provides high voltage isolation between the drain and the lead frame.
Fully avalanche-rated capability ensures robust performance under transient energy stress conditions.

Single FETs, MOSFETs Applications

DC-to-DC converter circuits
Motor control systems
Power management modules

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official manufacturer documentation before integration. Confirm that the specific ordering suffix matches the required package variant and lead-free status. Ensure storage and handling procedures comply with moisture sensitivity level requirements to prevent internal damage during soldering processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring logic-level gate drive compatibility alongside high current handling capabilities. The isolated package architecture is suitable for applications demanding galvanic separation between the drain and mounting hardware. Evaluate thermal management solutions to maintain junction temperatures within the specified operational limits during continuous conduction.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. It utilizes advanced processing techniques to minimize on-resistance while maintaining ruggedized device design. The product line is engineered for efficient power switching in various industrial and consumer electronic applications.