IRLR3410TRPBF

$0.83

Description：MOSFET N-CH 100V 17A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:381ba10524be Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLR3410TRPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 17A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLR3410TRPBF

Description：MOSFET N-CH 100V 17A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：105mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：79W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for IRLR3410TRPBF

IRLR3410TRPBF

Single FETs, MOSFETs Overview

The IRLR3410TRPBF is a single N-channel enhancement mode power MOSFET from the Fifth Generation HEXFET series, manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance per silicon area. The device features logic level gate drive capability and fast switching characteristics. It is housed in a D-Pak (TO-252) surface mount package with a lead-free construction. Key electrical parameters include a drain-source breakdown voltage of 100V, a continuous drain current of 17A at 25°C case temperature, and a maximum static drain-to-source on-resistance of 0.105Ω at VGS=10V.

Single FETs, MOSFETs Feature Summary

Logic Level Gate Drive
Ultra Low On-Resistance
Fast Switching
Fully Avalanche Rated

Single FETs, MOSFETs Applications

DC-DC converters
Motor control applications
Power supply circuits

Single FETs, MOSFETs Procurement Notes

Verify the component against official Infineon datasheets to confirm authenticity and specifications. Ensure the ordering suffix matches the required tape and reel packaging format. Check for RoHS compliance status as indicated in the documentation. Confirm that the part number corresponds to the D-Pak surface mount variant rather than the through-hole version.

Single FETs, MOSFETs Selection Notes

Select this component when a ruggedized N-channel MOSFET with logic-level gate drive is required. The device offers high efficiency due to its low on-resistance and fast switching speeds. Consider the thermal resistance values and safe operating area limits for the specific application environment. Verify that the 100V rating and 17A current capacity meet the circuit requirements.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs. It shares design principles with other devices in the series, utilizing similar process technology for performance optimization. The D-Pak package provides a compact solution for surface mounting. The product line includes variants with different pin configurations and mounting styles.