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IRLR3715ZPBF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 20V 49A DPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IRLR3715ZPBF
- Description：MOSFET N-CH 20V 49A DPAK
- Series：HEXFET®
- Mfr：Infineon Technologies
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：810 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：40W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-252AA (DPAK)
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Single FETs, MOSFETs datasheet and documents for IRLR3715ZPBF
Single FETs, MOSFETs Overview
The IRLR3715ZPBF is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 20V drain-source breakdown voltage and a maximum on-resistance of 15.5 milliohms at Vgs=10V. The device supports a continuous drain current of 49A in the DPAK-3 (TO-252-3) surface-mount package. Key electrical characteristics include a gate charge of 7.2nC, a power dissipation rating of 40W, and an operating junction temperature range from -55°C to +175°C.
Single FETs, MOSFETs Feature Summary
- HEXFET technology providing low on-resistance per silicon area
- Logic-level gate drive compatibility for direct microcontroller interfacing
- Enhanced avalanche energy capability for robust operation
- Integrated body diode with fast switching characteristics
Single FETs, MOSFETs Applications
- High-frequency synchronous buck converters
- Computer processor power supply circuits
- DC-DC converter modules
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized distribution channels due to potential counterfeit risks. Confirm RoHS compliance status as indicated in official datasheets. Check for lead-free soldering requirements compatible with assembly processes. Validate package markings against manufacturer specifications to ensure correct part identification before integration into production lines.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low gate charge and high efficiency at 20V ratings. Compare total gate charge and on-resistance values against alternative devices to optimize switching losses. Ensure thermal management solutions accommodate the specified power dissipation limits within the target operating environment constraints.
Single FETs, MOSFETs Part Context
This device belongs to the HEXFET family of power MOSFETs designed for high-efficiency power conversion. It utilizes advanced processing techniques to minimize unit area resistance while maintaining reliable switching performance. The TO-252-3 package offers a balance between thermal performance and space-saving surface mount installation.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for verified substitute part numbers. Cross-reference pinouts and electrical parameters carefully when considering alternatives.
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