IRLZ24NS

$1.39

Description：MOSFET N-CH 55V 18A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:b5fa6dbc923c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IRLZ24NS is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 18A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IRLZ24NS

Description：MOSFET N-CH 55V 18A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：55 V
Current - Continuous Drain (Id) @ 25°C：18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：60mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：15 nC @ 5 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：480 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：3.8W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IRLZ24NS

IRLZ24NS

Single FETs, MOSFETs Overview

The IRLZ24NS is a Fifth Generation HEXFET N-Channel Power MOSFET in a D2PAK surface-mount package. It features a maximum drain-source voltage of 55V and continuous drain current of 18A at 25°C case temperature. The device has a maximum on-resistance of 60mΩ at VGS=10V and 105mΩ at VGS=4.5V. Key electrical parameters include a gate threshold voltage range of 1.0V to 2.0V, total gate charge up to 15nC, and single pulse avalanche energy of 68mJ. Thermal resistance junction-to-case is 3.3°C/W, with an operating junction temperature range of -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for direct microcontroller interfacing
Advanced process technology enabling low on-resistance per silicon area
Fast switching characteristics optimized for high-frequency applications
Fully rated for repetitive avalanche energy operation

Single FETs, MOSFETs Applications

High-current DC-DC converter circuits
Motor control systems requiring logic-level drive
Power management modules utilizing surface mount assembly

Single FETs, MOSFETs Procurement Notes

Verify the component marking matches the specific part number and manufacturer logo. Confirm the package type corresponds to the D2PAK outline dimensions provided in the datasheet. Ensure the device meets the required thermal and electrical specifications for the intended application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a surface-mount solution is required for 55V applications. The logic-level gate drive allows compatibility with standard 5V control signals. Consider the thermal resistance and power dissipation limits relative to the expected ambient temperature and PCB copper area for adequate heat sinking.

Single FETs, MOSFETs Part Context

This device belongs to the Fifth Generation HEXFET family from International Rectifier, now Infineon Technologies. It utilizes advanced processing techniques to achieve low on-resistance. The D2PAK package provides high power capability and low internal connection resistance suitable for high-current applications.

Single FETs, MOSFETs Replacement Considerations

The IRLZ24NL serves as the low-profile through-hole alternative within the same series. Verify pinout compatibility and package dimensions when substituting between surface mount and through-hole variants.