ISA150233C03LMDSXTMA1

FET, MOSFET Arrays Overview

The ISA150233C03LMDSXTMA1 is an OptiMOS™ Dual N+P channel power MOSFET with a 30 V voltage rating, housed in an SO-8 package. It features a maximum drain-source voltage of 30 V for the N-channel and -30 V for the P-channel. The device supports a continuous drain current of 10.2 A at 25°C for the N-channel and -8.8 A for the P-channel. Typical gate charge values are 6.7 nC and -12 nC at 4.5 V, rising to 14 nC and -24 nC at 10 V. Maximum on-resistance is 23.3 mΩ at 10 V and 27.7 mΩ at 4.5 V for the N-channel, while the P-channel exhibits 15 mΩ at 10 V and 18.7 mΩ at 4.5 V. The threshold voltage ranges from 1.1 V to 2.7 V for the N-channel and -1.1 V to -2.7 V for the P-channel.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating complementary N-channel and P-channel MOSFETs within a single component.
• OptiMOS™ technology designed for optimized switching performance and low conduction losses.
• Logic-level gate drive capability enabling direct interface with standard logic outputs.

FET, MOSFET Arrays Applications

• Synchronous rectification in DC/DC converter circuits
• Low-side and high-side switching in motor control applications
• Power management modules requiring compact dual-transistor solutions

FET, MOSFET Arrays Procurement Notes

Verify the XTMA1 suffix indicates the specific tape-and-reel packaging variant required for automated assembly processes. Confirm that the RoHS compliance status aligns with current environmental regulations for the target market. Ensure the SO-8 footprint matches the PCB design constraints before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for 30 V applications. Evaluate the combined gate charge and on-resistance parameters against the system's switching frequency and efficiency targets. Consider the thermal performance characteristics inherent to the SO-8 package for heat dissipation requirements.

FET, MOSFET Arrays Part Context

This part belongs to Infineon's OptiMOS™ family of power MOSFETs, specifically engineered for efficient power switching. The dual N+P configuration allows for simplified circuit designs in half-bridge and synchronous rectifier topologies. The SO-8 package provides a balance between current handling capabilities and board space efficiency.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Ensure any replacement maintains identical pinout compatibility and electrical specifications within the 30 V class.