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ISC036N04NM5ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is 40V 3.6M OPTIMOS MOSFET SUPERSO8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for ISC036N04NM5ATMA1
- Description：40V 3.6M OPTIMOS MOSFET SUPERSO8
- Series：OptiMOS™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：21A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：7V, 10V
- Rds On (Max) @ Id, Vgs：3.6mOhm @ 49A, 10V
- Vgs(th) (Max) @ Id：3.4V @ 23µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：3W (Ta), 63W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8 FL
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for ISC036N04NM5ATMA1
Single FETs, MOSFETs Overview
The ISC036N04NM5 is an OptiMOS 5 N-channel power transistor rated for a drain-source voltage of 40 V. It features a maximum on-resistance of 3.6 mΩ and supports a continuous drain current of 98 A at 25°C case temperature. The device utilizes a TDSON-8 FL package with enlarged source interconnection to provide superior thermal resistance, characterized by a junction-to-case bottom thermal resistance of 2.4 °C/W. Key dynamic parameters include a total gate charge of 21 nC and an output charge of 22 nC.
Single FETs, MOSFETs Feature Summary
- Optimized for battery-powered applications and low-voltage motor drives
- Features very low on-resistance and superior thermal performance
- Includes enlarged source interconnection in the TDSON-8 FL package
- Subjected to 100% avalanche testing for enhanced reliability
Single FETs, MOSFETs Applications
- Battery-powered applications
- Low-voltage motor drives
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code against official Infineon documentation to ensure correct package and marking identification. Confirm that the procurement matches the industrial qualification standards specified in the datasheet. Ensure compliance with RoHS and halogen-free requirements as defined by IEC61249-2-21 before finalizing orders.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high efficiency in 40 V systems. The TDSON-8 FL package offers improved thermal dissipation compared to standard variants. Consider the 98 A continuous current rating and 3.6 mΩ maximum on-resistance when calculating conduction losses. Verify gate drive compatibility with the 21 nC total gate charge requirement.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS 5 family of power transistors from Infineon Technologies. It is designed for industrial applications and fully qualified according to JEDEC standards. The technology focuses on minimizing on-state resistance while maintaining robust switching characteristics suitable for modern power conversion topologies.
Single FETs, MOSFETs Replacement Considerations
Check for compatible parts within the OptiMOS 5 series offering similar voltage ratings and package dimensions. Ensure any substitute maintains the TDSON-8 FL footprint and meets the 40 V breakdown voltage specification.
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