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Product Detailed Parameters
- Description：TRENCH 40<-<100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ISC088N08NM6ATMA1 is an N-channel Power MOSFET from Infineon Technologies, belonging to the OptiMOS 8 series. It features a PG-TDSON-8 surface-mount package and utilizes Silicon technology. The device supports a drain-source voltage of 80 V and delivers a continuous drain current of 59 A at case temperature. Key electrical parameters include a maximum on-resistance of 1.2 mΩ, a gate charge of 76 nC, and a threshold voltage range of 2 V to 3.5 V. It operates within a junction temperature range of -55°C to +175°C with a power dissipation capacity of 71 W under case cooling conditions.
Feature Summary
- OptiMOS 8 technology provides optimized switching performance for high-efficiency applications.
- Low on-resistance minimizes conduction losses in power conversion circuits.
- Enhanced thermal design supports reliable operation in compact surface-mount layouts.
Applications
- Telecommunications power supplies
- Server and data center power distribution
- Solar energy management systems
- Battery management units
Procurement Notes
Verify the specific ordering suffix ATMA1 to confirm tape-and-reel packaging and lead frame material specifications. Ensure the procurement channel sources genuine Infineon components to guarantee datasheet compliance. Cross-reference the full part number against official distributor catalogs to avoid substitution errors during component sourcing.
Selection Notes
Select this component for designs requiring low RDS(on) within an 80 V rating envelope. The PG-TDSON-8 package suits space-constrained PCB layouts. Evaluate thermal requirements carefully, as the 71 W dissipation limit applies specifically to case temperature conditions rather than ambient air cooling.
Part Context
This part belongs to the OptiMOS 8 family, representing a generation of silicon power MOSFETs designed for improved efficiency over previous iterations. It complements other variants in the series by offering a balance between current handling capability and switching speed suitable for modern DC-DC converters.
Replacement Considerations
Direct substitutes include ISC088N08NM6 and ISC088N08NM6ATMA. Verify pinout compatibility and thermal resistance values when considering alternative packages or older generation OptiMOS devices.
