ISC119N20NM6ATMA1

ISC119N20NM6ATMA1

$2.31
  • Description:IGBT TRENCH 100V
  • Series:-

SKU:7013c346a256 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH 100V
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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ISC119N20NM6ATMA1

Overview

The ISC119N20NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 6 technology. It features a 200 V drain-source voltage rating and a maximum continuous drain current of 87 A at 25°C. The device exhibits a typical on-state resistance of 11.9 mΩ at 10 V gate drive. Packaged in a leadless TO-263-7 (D²PAK 7-pin) format, it supports surface-mount installation. Key electrical parameters include a gate charge of approximately 37 nC and a threshold voltage range of 3 V to 4.5 V. The component operates within a temperature range of -55°C to +175°C junction temperature.

Feature Summary

  • OptiMOS 6 technology integration for optimized switching performance
  • Leadless TO-263-7 package design for enhanced thermal dissipation
  • High current capability suitable for demanding power applications

Applications

  • Server power supply units
  • AC-DC power conversion for telecommunications infrastructure
  • Battery management systems

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product qualification reports. Cross-reference the full part number with authorized distributor catalogs to validate availability and authenticity before finalizing procurement orders.

Selection Notes

Select this component for applications requiring 200 V blocking capability with high current handling. The low on-resistance minimizes conduction losses in efficient power designs. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel. Verify that the thermal management solution accommodates the specified power dissipation limits under worst-case operating conditions.

Part Context

This part belongs to the OptiMOS 6 family of 200 V N-channel MOSFETs. It shares architectural similarities with other devices in the series, such as the IPF129N20NM6ATMA1, but offers distinct on-resistance characteristics. The family targets general-purpose power switching needs across industrial and consumer electronics sectors.

Replacement Considerations

Direct substitutes may include other OptiMOS 6 devices with comparable voltage and current ratings, such as the IPF129N20NM6ATMA1. Verify pinout compatibility and thermal resistance values when considering alternative packages. Consult official replacement guides for confirmed cross-references.

ISC119N20NM6ATMA1ISC119N20NM6ATMA1
$2.31
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