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The ISC119N20NM6ATMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS 6 technology. It features a 200 V drain-source voltage rating and a maximum continuous drain current of 87 A at 25°C. The device exhibits a typical on-state resistance of 11.9 mΩ at 10 V gate drive. Packaged in a leadless TO-263-7 (D²PAK 7-pin) format, it supports surface-mount installation. Key electrical parameters include a gate charge of approximately 37 nC and a threshold voltage range of 3 V to 4.5 V. The component operates within a temperature range of -55°C to +175°C junction temperature.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest product qualification reports. Cross-reference the full part number with authorized distributor catalogs to validate availability and authenticity before finalizing procurement orders.
Select this component for applications requiring 200 V blocking capability with high current handling. The low on-resistance minimizes conduction losses in efficient power designs. Ensure the driving circuit can provide sufficient gate voltage to fully enhance the channel. Verify that the thermal management solution accommodates the specified power dissipation limits under worst-case operating conditions.
This part belongs to the OptiMOS 6 family of 200 V N-channel MOSFETs. It shares architectural similarities with other devices in the series, such as the IPF129N20NM6ATMA1, but offers distinct on-resistance characteristics. The family targets general-purpose power switching needs across industrial and consumer electronics sectors.
Direct substitutes may include other OptiMOS 6 devices with comparable voltage and current ratings, such as the IPF129N20NM6ATMA1. Verify pinout compatibility and thermal resistance values when considering alternative packages. Consult official replacement guides for confirmed cross-references.