ISG0613N04NM6HATMA1

FET, MOSFET Arrays Overview

The ISG0613N04NM6H is a dual N-channel OptiMOS™ 6 power transistor featuring a symmetrical half-bridge configuration within a PG-VITFN-10 package. It provides a drain-source voltage of 40 V and a maximum on-resistance of 0.88 mΩ at VGS=10 V. The device supports a continuous drain current of 299 A at TC=25 °C and handles pulsed currents up to 1196 A. Key dynamic parameters include a total gate charge of 69 nC, output charge of 76 nC, turn-on delay of 15 ns, and fall time of 6.1 ns. Thermal resistance from junction to case is 0.6 °C/W.

FET, MOSFET Arrays Feature Summary

• Symmetrical half-bridge topology integrating two N-channel MOSFETs for compact layout
• Optimized for low-voltage drives, battery-powered applications, and high-performance SMPS
• Superior thermal resistance with internal body diodes for each channel
• 100% avalanche tested and fully qualified according to JEDEC for industrial applications

FET, MOSFET Arrays Applications

• Low-voltage motor drives
• Battery-powered equipment
• High-performance synchronous rectification in switch-mode power supplies

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component meets the required industrial temperature range and RoHS compliance standards before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual-N-channel solution is required for 40 V systems. The low RDS(on) and optimized gate charge support efficient switching in space-constrained designs. Evaluate thermal management requirements based on the specified junction-to-case resistance for the target operating environment.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 6 family, designed for advanced power switching performance. It utilizes silicon technology and is housed in the PG-VITFN-10 surface-mount package. The device is intended for industrial applications requiring robust reliability and high power density.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current capability?

The device supports a pulsed drain current of 1196 A at TA=25 °C.

Is the device suitable for industrial temperature ranges?

Yes, it is fully qualified according to JEDEC for industrial applications with an operating temperature range of -55 °C to 175 °C.

Does the component include integrated body diodes?

Yes, the datasheet specifies internal body diodes for both channels within the symmetrical half-bridge structure.