ISG0614N06NM5HSCATMA1

$4.48

Description：MOSFET 2N-CH 60V 31A 10WHITFN
Series：OptiMOS™ 5

SKU:486b1b97f0e0 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

ISG0614N06NM5HSCATMA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 60V 31A 10WHITFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for ISG0614N06NM5HSCATMA1

Description：MOSFET 2N-CH 60V 31A 10WHITFN
Series：OptiMOS™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：31A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs：1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：3.3V @ 86µA
Gate Charge (Qg) (Max) @ Vgs：102nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：6400pF @ 30V
Power - Max：3W (Ta), 167W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：10-PowerWDFN
Supplier Device Package：PG-WHITFN-10-1
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for ISG0614N06NM5HSCATMA1

ISG0614N06NM5HSCATMA1

FET, MOSFET Arrays Overview

The ISG0614N06NM5HSC is a dual N-channel OptiMOS™ 5 power transistor rated for 60 V drain-source voltage. It features a maximum on-resistance of 1.6 mΩ and supports a continuous drain current of 233 A at 25 °C case temperature. The device utilizes the PG-WHITFN-10-1 package, providing superior thermal resistance with junction-to-case values of 0.6 °C/W (bottom) and 0.40 °C/W (top). Key dynamic parameters include a total gate charge of 68 nC and an output charge of 74 nC.

FET, MOSFET Arrays Feature Summary

Symmetrical half-bridge configuration designed for balanced switching performance
Optimized for low voltage drives and battery-powered applications
Superior thermal resistance capabilities for high-power density designs
Fully qualified according to JEDEC standards for industrial applications

FET, MOSFET Arrays Applications

High-performance synchronous buck converters
Low voltage motor drive circuits
Battery-powered equipment power stages

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering code suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Cross-reference the marking code 61406N5HC during incoming inspection to validate authenticity and traceability.

FET, MOSFET Arrays Selection Notes

Select this component when designing symmetrical half-bridge topologies requiring low conduction losses. Evaluate the thermal management strategy based on the specified junction-to-case resistance values. Ensure the gate drive voltage aligns with the threshold characteristics for optimal RDS(on) performance under varying load conditions.

FET, MOSFET Arrays Part Context

This part belongs to the OptiMOS™ 5 family, representing advanced silicon MOSFET technology from Infineon Technologies. It is specifically engineered to minimize on-resistance while maintaining robust avalanche energy handling capabilities. The series targets efficiency improvements in modern power conversion systems.