ISL55013IEZ-T7

Overview

The ISL55013IEZ-T7 is a silicon bipolar MMIC broadband RF amplifier manufactured by Renesas Electronics. Designed for general-purpose applications, it operates within a frequency range of 500 MHz to 3 GHz. The device delivers a gain of 13.1 dB with a noise figure of 5 dB. It features a P1dB compression point of 17.4 dBm and an OIP3 of 27 dBm. Powered by a 3 V supply, the component draws 71 mA of operating current. It is housed in a compact SC-70-6 surface-mount package suitable for space-constrained wireless designs.

Feature Summary

• Broadband amplification capability across the 500 MHz to 3 GHz spectrum
• High linearity performance with significant output power handling
• Low noise figure optimized for signal integrity preservation
• Compact SC-70-6 surface-mount packaging for efficient board layout

Applications

• Bluetooth module signal conditioning
• General purpose RF signal amplification
• Wireless communication system front-ends

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm that the specific suffix matches the required reel or cut tape configuration for your assembly process. Ensure compliance with RoHS standards as indicated in official documentation. Cross-reference the manufacturer part number against current discontinuation notices to confirm long-term availability status before finalizing procurement plans.

Selection Notes

Select this component when a broadband solution covering sub-GHz to 3 GHz frequencies is required. The 13.1 dB gain and 5 dB noise figure make it suitable for low-noise applications. Consider the 3 V operating voltage requirement for power budget alignment. The SC-70-6 package dictates footprint constraints during PCB design. Evaluate thermal management needs based on the 71 mA current draw in the final enclosure.

Part Context

This part belongs to the ISL5501x series of RF amplifiers from Renesas. It complements other models like the ISL55012 and ISL55014, offering specific frequency and gain characteristics tailored for different wireless standards. The series utilizes silicon bipolar technology to provide reliable performance in compact form factors for modern mobile and IoT devices.

Replacement Considerations

Direct substitutes include the ISL55012IEZ-T7 and ISL55014IEZ-T7. Verify if the alternative part meets the specific 500 MHz to 3 GHz bandwidth and gain requirements. Check pin compatibility and package dimensions to ensure seamless integration without redesigning the PCB footprint.