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Product Detailed Parameters
- Description：IGBT 430V 15.5A TO-263
- Series：EcoSPARK®
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：430 V
- Current - Collector (Ic) (Max)：15.5 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.8V @ 4V, 6A
- Power - Max：166.7 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：15.1 nC
- Td (on/off) @ 25°C：-/3.64µs
- Test Condition：300V, 1kOhm, 5V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263 (D2PAK)
- Grade：-
- Qualification：-
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Overview
The ISL9V2540S3ST is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It features a maximum collector-emitter voltage of 450 V and a continuous collector current rating of 15.5 A. The device is housed in a surface-mount D2PAK (TO-263) package with three pins. Key electrical specifications include a maximum power dissipation of 166.7 W and a maximum gate-emitter voltage of ±14 V. It operates within a temperature range of -40 °C to +175 °C.
Feature Summary
- High thermal stability supporting operation up to +175 °C junction temperature
- Surface-mount D2PAK packaging for efficient PCB integration
- Robust 450 V blocking voltage capability for industrial applications
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify the manufacturer designation carefully, as the component was originally developed by Fairchild Semiconductor and is now produced by onsemi following corporate restructuring. Ensure the ordering suffix matches the required tape-and-reel or cut-tape configuration. Confirm RoHS compliance status through the specific datasheet revision provided by the authorized distributor.
Selection Notes
Select this IGBT when a 450 V rating and approximately 15.5 A continuous current are required in a surface-mount form factor. Compare the 166.7 W power dissipation limit against your thermal management design. Verify that the gate drive voltage requirements align with the ±14 V maximum specification to ensure reliable switching performance.
Part Context
This component belongs to the ISL9V series of high-voltage IGBTs. The 'S3' suffix typically denotes the specific pinout and package variant compatible with standard TO-263 footprints. This series is designed for medium-power switching applications requiring high efficiency and ruggedness in demanding electrical environments.
Replacement Considerations
Direct substitutes must match the 450 V / 15.5 A / D2PAK specifications. Check equivalent part numbers from onsemi or other manufacturers offering identical voltage and current ratings in the same surface-mount package to ensure pin compatibility.
