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The ISL9V5045S3ST-F085C is a 450 V N-channel ignition IGBT from the ECOSPARK family, designed for automotive applications. It features a D2PAK-3 (TO-263) surface-mount package with an internal gate resistance of 100 Ω. Key electrical parameters include a collector-emitter breakdown voltage of 450 V and a continuous collector current of 51 A at 25°C case temperature. The device supports a self-clamped inductive switching energy of 500 mJ at 25°C and 315 mJ at 150°C. It operates within a junction temperature range of -40°C to 175°C and is qualified to AEC-Q101 standards.
Verify component authenticity by checking the marking diagram against the physical device. Confirm the specific device code matches V5045SC. Ensure the package type corresponds to D2PAK-3. Validate that the ordering suffix F085C aligns with the required tape and reel specifications for production integration.
Select this component when designing automotive ignition systems requiring high avalanche energy handling. The integrated 100 Ω gate resistance simplifies external gate drive circuitry. Ensure thermal management accommodates the 0.9 °C/W junction-to-case thermal resistance. Verify that the 450 V breakdown voltage meets the system's maximum voltage requirements under all operating conditions.
This part belongs to the ECOSPARK family of ignition IGBTs manufactured by onsemi. It utilizes silicon technology and is housed in a lead-free D2PAK-3 package. The device is specifically engineered for robust performance in harsh automotive environments, distinguishing it from general-purpose power transistors through its specialized avalanche characteristics and logic-level gate drive compatibility.
Direct substitutes are not explicitly listed in the provided documentation. Evaluate alternative parts based on matching voltage ratings, current capabilities, and package dimensions. Ensure any replacement maintains AEC-Q101 qualification if automotive compliance is required.