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ISP14EP15LMXTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SMALL SIGNAL MOSFETS PG-SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for ISP14EP15LMXTSA1
- Description：SMALL SIGNAL MOSFETS PG-SOT223-4
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：150 V
- Current - Continuous Drain (Id) @ 25°C：770mA (Ta), 1.29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.38Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id：2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：530 pF @ 75 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta), 5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for ISP14EP15LMXTSA1
Single FETs, MOSFETs Overview
The ISP14EP15LMXTSA1 is a P-Channel enhancement mode MOSFET from Infineon Technologies' OptiMOS series. It features a drain-source breakdown voltage of 150 V and a continuous drain current of 1.29 A. The device exhibits a typical on-resistance of 1.38 Ohms at specified gate drive conditions. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 5 W. Packaged in SMD/SMT format, it utilizes silicon technology for robust performance in switching applications.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology optimized for low conduction losses
- Enhanced thermal stability for high-temperature operation
- Robust packaging for surface mount reliability
Single FETs, MOSFETs Applications
- DC-DC converter circuits
- Motor control systems
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct package and tape specifications. Confirm RoHS compliance status through the manufacturer's certificate. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design files.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring reliable P-channel switching at 150 V. Evaluate thermal management requirements given the 5 W dissipation limit. Ensure gate drive voltages align with the device's threshold characteristics for optimal efficiency and switching speed in the target application environment.
Single FETs, MOSFETs Part Context
This part belongs to the ISP14EP15 series of OptiMOS P-MOSFETs. It is designed for general-purpose power switching tasks where moderate current handling and high voltage tolerance are required. The series emphasizes cost-effective solutions for industrial and consumer electronics power stages.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics.
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