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IV1D12030T2 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Inventchip. Its product description is DIODE SIL CARB 1200V 30A TO247-2. Review the specifications below when checking this part for your BOM.
The IV1D12030T2 is a Silicon Carbide (SiC) Schottky diode manufactured by Inventchip Technology. It features a single diode configuration housed in a TO-247-2 through-hole package. The device supports a maximum reverse voltage of 1200V and operates with a junction temperature range from -55°C to 175°C. Key electrical characteristics include a reverse leakage current of 200µA at the rated voltage. This component is designed for high-efficiency power conversion applications requiring fast switching capabilities.
Verify the specific suffix T2 against official Inventchip documentation to confirm pinout and thermal pad specifications. Ensure the supplier provides traceable datasheets matching the 1200V rating and TO-247-2 package type. Cross-reference manufacturing dates and lot codes for quality assurance in critical power electronics assemblies.
Select this component when designing systems requiring low reverse recovery charge and high thermal stability. Compare the 200µA leakage current and 1200V blocking capability against circuit requirements. Consider the TO-247-2 package for adequate heat dissipation in high-current scenarios without active cooling constraints.
Inventchip Technology specializes in Silicon Carbide power devices and gate driver ICs. Founded in 2017, the company operates an IATF 16949-certified wafer fabrication facility in Zhejiang Province, China. The IV1D12030T2 represents their SiC diode portfolio aimed at replacing traditional silicon components in high-performance power electronics.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing footprints and thermal management designs before considering alternative manufacturers.
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