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The IXA33IF1200HB is a single IGBT module manufactured by IXYS, utilizing XPT (Extra Punch Through) technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 33 A at 25°C. The device has a typical saturated collector-emitter voltage of 1.9 V and a maximum power dissipation of 150 W. It operates within a junction temperature range of -40°C to +150°C. The component is housed in an ISOPLUS-SMPD-9 package designed for surface mount installation.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status and check for any recent product change notifications or end-of-life announcements from IXYS before finalizing procurement plans.
Select this component based on its 1200 V blocking capability and 33 A current rating suitable for medium-power applications. Ensure the PCB layout supports the ISOPLUS-SMPD-9 footprint and that the thermal design can handle the 150 W power dissipation limit under expected operating conditions.
This part belongs to the IXYS IXA series of XPT IGBTs, which are engineered for improved switching performance compared to standard PT technologies. The series targets applications demanding higher efficiency and reduced switching losses in power electronic systems.
No official direct substitutes are listed in public documentation. Evaluate alternative 1200 V, 33 A IGBTs in similar packages only after verifying pinout compatibility, thermal resistance values, and electrical parameters against the original datasheet specifications.