IXA4I1200UC-TRL

Overview

The IXA4I1200UC-TRL is a discrete Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and features a TO-252 package configuration. The device has a collector-emitter maximum voltage rating of 1200 V and a gate-emitter maximum voltage range of -20 V to +20 V. It is supplied in a Reel packaging format with a factory pack quantity of 2500 units. The product falls under the IGBT Transistors subcategory.

Feature Summary

• XPT trench IGBT technology for optimized performance
• Square reverse bias safe operating area
• 650V breakdown voltage architecture

Applications

• High voltage switching applications
• Industrial power conversion systems
• Inverter circuits requiring robust blocking capability

Procurement Notes

Verify current availability status as the component may be subject to discontinuation or limited distribution channels. Confirm RoHS compliance details through official datasheets before integration. Check for alternative packaging options if reel quantities are not required for specific prototyping needs.

Selection Notes

Select this component for designs requiring high voltage isolation and reliable switching characteristics. Ensure thermal management strategies align with the TO-252 package limitations. Verify that the 1200V rating exceeds the maximum circuit voltage requirements with appropriate safety margins.

Part Context

This part belongs to the IXYS XPT GenX5 trench IGBT family, known for square reverse bias safe operating areas. It represents a discrete solution within a broader portfolio of power semiconductors designed for efficient energy conversion and control in demanding electrical environments.

Replacement Considerations

Check for equivalent parts from other manufacturers offering similar 1200V ratings and TO-252 packages. Verify pinout compatibility and thermal resistance values when considering substitutes. Review manufacturer notices for potential obsolescence or recommended upgrades.