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Product Detailed Parameters
- Description：IGBT 1200V 9A TO-268AA
- Series：-
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 3A
- Power - Max：45 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：12 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268AA
- Grade：-
- Qualification：-
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Overview
The IXA4IF1200TC-TRL is a discrete Insulated Gate Bipolar Transistor (IGBT) from the IXYS XPT GenX5 series. It features a 650V breakdown voltage and utilizes trench gate technology for optimized switching performance. The device is supplied in a Reel packaging format with a factory pack quantity of 400 units. Key electrical ratings include a maximum collector-emitter voltage of 1.2 kV, a continuous collector current of 45 A at 25°C, and a saturated collector-emitter voltage of 1.8 V. The component operates within a temperature range of -40°C to +125°C and supports a power dissipation of 325 W.
Feature Summary
- Incorporates XPT trench gate technology for enhanced efficiency
- Features a square reverse-biased safe operating area
- Designed for high-voltage switching applications
Applications
- Industrial motor drives
- Uninterruptible power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix 'TRL' against the manufacturer's official datasheet to confirm reel packaging specifications and handling requirements. Ensure compatibility with existing PCB footprints and thermal management solutions before integration. Cross-reference the part number with the latest production notices to confirm availability status and any potential lifecycle changes.
Selection Notes
Select this component when a 650V or 1.2kV rated IGBT with low saturation voltage is required. Compare the 45A continuous current rating against the application's peak load demands. Evaluate the thermal resistance characteristics to ensure adequate heat sinking for the specified 325W power dissipation limit under expected operating conditions.
Part Context
This device belongs to the IXYS IXA4IF series, which represents the fifth generation of XPT trench gate IGBTs. These components are engineered for high-power density applications requiring robust performance. The series is characterized by its ability to handle high currents with minimal conduction losses, making it suitable for demanding industrial environments.
Replacement Considerations
Check for direct cross-references in the IXYS product portfolio. Verify pinout compatibility and thermal interface dimensions if substituting with other 1.2kV IGBTs. Ensure that alternative devices meet or exceed the 1.8V Vce(sat) and 45A Ic specifications.
