IXA70I1200NA

IXA70I1200NA

  • Description:IGBT MOD 1200V 100A 350W SOT227B
  • Series:-

SKU:8a2e626932bb Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 100A 350W SOT227B
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:PT
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis, Stud Mount
  • Package / Case:SOT-227-4, miniBLOC
  • Supplier Device Package:SOT-227B
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:350 W
  • Current - Collector Cutoff (Max):100 µA
  • Input Capacitance (Cies) @ Vce:-

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IXA70I1200NA

Overview

The IXA70I1200NA is a single IGBT module from the IXYS XPT series, designed for high-voltage power conversion. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (IC at 25°C) of 88 A. The saturation voltage (VCE(sat)) is specified at 1.8 V. The device utilizes screw mount installation in an SOT-227B-4 package. Power dissipation (Pd) reaches 290 W, with an operating temperature range from -55°C to +150°C. Gate-emitter maximum voltage is ±20 V, and leakage current is 500 nA.

Feature Summary

  • XPT technology implementation for optimized switching and conduction performance
  • Single IGBT configuration within a robust modular housing
  • High thermal stability supporting extended operating temperatures

Applications

  • High voltage industrial motor drives
  • Uninterruptible power supply systems
  • Frequency converters and inverters

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Request original datasheets and material certificates to confirm specifications. Inspect packaging integrity upon receipt. Validate part markings against official documentation to prevent counterfeit substitution during procurement processes.

Selection Notes

Evaluate thermal management requirements carefully given the 290 W power dissipation rating. Ensure gate drive circuits accommodate the ±20 V limit. Compare electrical parameters against system voltage and current demands. Consider availability constraints as the component is marked obsolete by the manufacturer.

Part Context

This component belongs to the IXYS IXA series of XPT insulated gate bipolar transistors. The series targets medium to high power applications requiring reliable switching capabilities. The specific model integrates advanced trench gate technology for improved efficiency compared to standard planar designs.

Replacement Considerations

The manufacturer has declared this product obsolete. No direct public substitute part numbers are confirmed in available documentation. Designers should consult updated IXYS portfolios or alternative manufacturers for compatible replacements.

IXA70I1200NAIXA70I1200NA

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