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The IXA70I1200NA is a single IGBT module from the IXYS XPT series, designed for high-voltage power conversion. It features a collector-emitter voltage (VCEO) of 1200 V and a continuous collector current (IC at 25°C) of 88 A. The saturation voltage (VCE(sat)) is specified at 1.8 V. The device utilizes screw mount installation in an SOT-227B-4 package. Power dissipation (Pd) reaches 290 W, with an operating temperature range from -55°C to +150°C. Gate-emitter maximum voltage is ±20 V, and leakage current is 500 nA.
Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Request original datasheets and material certificates to confirm specifications. Inspect packaging integrity upon receipt. Validate part markings against official documentation to prevent counterfeit substitution during procurement processes.
Evaluate thermal management requirements carefully given the 290 W power dissipation rating. Ensure gate drive circuits accommodate the ±20 V limit. Compare electrical parameters against system voltage and current demands. Consider availability constraints as the component is marked obsolete by the manufacturer.
This component belongs to the IXYS IXA series of XPT insulated gate bipolar transistors. The series targets medium to high power applications requiring reliable switching capabilities. The specific model integrates advanced trench gate technology for improved efficiency compared to standard planar designs.
The manufacturer has declared this product obsolete. No direct public substitute part numbers are confirmed in available documentation. Designers should consult updated IXYS portfolios or alternative manufacturers for compatible replacements.