IXBA16N170AHV

Overview

The IXBA16N170AHV is a single N-channel enhancement-mode MOSFET from the BIMOSFET family, manufactured by IXYS. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device features a drain-source breakdown voltage of 1.7 kV and supports a continuous drain current of 16 A. It operates with a gate-source voltage range of -20 V to +20 V and has a threshold voltage of 2.5 V. Key electrical characteristics include a gate charge of 65 nC and a power dissipation rating of 150 W. The component functions within a temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability with a 1.7 kV drain-source breakdown voltage for robust operation in demanding environments.
• Integrated body diode structure inherent to the BIMOSFET design for efficient switching applications.
• Surface-mount construction in a TO-263-3 package suitable for automated assembly processes.

Applications

• High-voltage DC-DC converter circuits
• Induction heating systems
• Motor drive inverters

Procurement Notes

Verify the specific suffix AHV against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure that the ordering documentation explicitly references the IXYS part number IXBA16N170AHV to distinguish it from similar high-voltage MOSFETs. Confirm RoHS compliance status through the latest environmental declaration provided by the supplier.

Selection Notes

Select this component when a single N-channel configuration with 1.7 kV blocking capability is required in a surface-mount form factor. Compare the 16 A continuous current rating and 150 W power dissipation against the thermal management capabilities of the target PCB layout. Evaluate the 65 nC gate charge relative to the driving circuit's speed requirements.

Part Context

This device belongs to the IXYS BIMOSFET series, which combines MOSFET and IGBT technologies. It serves as a high-voltage switching solution distinct from standard low-voltage logic-level MOSFETs. The TO-263-3 package provides a balance between thermal performance and compact footprint compared to through-hole alternatives like TO-247.

Replacement Considerations

Cross-reference with other IXYS BIMOSFET variants such as the IXBT or IXBH series if through-hole mounting is preferred. Verify that substitute parts maintain the 1.7 kV voltage rating and compatible gate threshold levels before implementation.