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Product Detailed Parameters
- Description：IGBT 1700V 40A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：3.3V @ 15V, 16A
- Power - Max：250 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：72 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.32 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXYS IXBH16N170 is a single silicon IGBT in the BIMOSFET series, housed in a TO-247AD-3 through-hole package. It features a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 25 A at 25°C, with a peak pulse current capability of 40 A. The device exhibits a typical collector-emitter saturation voltage of 3.3 V and supports a power dissipation of 250 W. Operating within a temperature range of -55°C to +150°C junction temperature, it utilizes standard gate drive parameters with ±20 V limits.
Feature Summary
- Monolithic integration of an IGBT chip with a fast recovery anti-parallel diode for efficient switching applications.
- Utilizes IXYS BIMOSFET technology to achieve low on-state voltage drop and optimized switching performance.
- Designed for robust operation in high-voltage environments with a 1.7 kV blocking capability.
Applications
- High-frequency induction heating systems
- Uninterruptible power supply (UPS) inverters
- Motor control drives
Procurement Notes
Verify the specific revision level against the manufacturer datasheet prior to implementation, as component specifications may evolve. Confirm that the TO-247AD-3 package dimensions align with the target PCB footprint and thermal management design. Ensure gate drive circuits adhere to the specified ±20 V maximum ratings to prevent device degradation or failure during operation.
Selection Notes
Select this component when a 1.7 kV rating is required alongside moderate current handling up to 25 A continuous. The TO-247AD-3 package facilitates effective heat sinking for power dissipation levels up to 250 W. Consider the 3.3 V saturation voltage for efficiency calculations in hard-switching topologies where low conduction losses are prioritized over ultra-fast switching speeds.
Part Context
This device belongs to the IXYS BIMOSFET family, which combines bipolar and MOS technologies. These components are engineered for medium-power applications requiring reliable high-voltage switching. The IXBH16N170 specifically targets industrial power conversion needs, offering a balance between conduction efficiency and switching speed within a standard through-hole form factor suitable for legacy and new designs.
Replacement Considerations
Cross-reference with IXBT16N170A for surface-mount alternatives or IXGH24N170 for higher current capacity in similar packages. Verify pinout compatibility and thermal resistance values before substituting to ensure circuit integrity.
