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Product Detailed Parameters
- Description：IGBT 3000V 80A TO-247AD
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：3000 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：280 A
- Vce(on) (Max) @ Vge, Ic：3.2V @ 15V, 32A
- Power - Max：400 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：142 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：1.5 µs
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXBH32N300 is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter breakdown voltage of 3000V and a continuous collector current rating of 32A at 25°C. The device exhibits a typical saturation voltage of 3.2V under standard test conditions. It is housed in the ISOPLUS i4-PAC™ package, designed for through-hole mounting. The component supports a junction temperature range from -55°C to 150°C and includes an integrated anti-parallel diode.
Feature Summary
- High blocking voltage capability suitable for demanding power applications
- Integrated anti-parallel diode for efficient circuit design
- Low gate drive requirement reducing control complexity
- High power density construction
Applications
- Switched-mode power supplies
- Resonant-mode power supplies
- Uninterruptible power supplies (UPS)
- Laser generators
- Capacitor discharge circuits
Procurement Notes
Verify the specific suffix or variant code against the manufacturer's official datasheet to ensure compatibility with required thermal and electrical specifications. Confirm that the ISOPLUS i4-PAC™ package dimensions match the intended PCB layout. Cross-reference the part number with Littelfuse documentation, as IXYS has been acquired, to access the most current technical parameters and reliability data.
Selection Notes
Select this component for high-voltage DC-DC converters or inverters requiring robust isolation and high gain. The 3000V rating makes it appropriate for industrial motor drives and high-power laser systems. Ensure the thermal management solution accommodates the specified power dissipation limits within the operating temperature range. Verify gate drive voltage compatibility with the standard input type configuration.
Part Context
The IXBH32N300 belongs to the BIMOSFET family of monolithic bipolar MOS transistors produced by IXYS. This series is characterized by high voltage handling and high gain characteristics. The device represents a discrete power semiconductor solution designed for integration into high-performance power electronics systems where reliability and efficiency are critical operational requirements.
Replacement Considerations
Official substitutes include the IXBF32N300 and IXBA14N300HV. Verify pinout compatibility and thermal resistance values before substitution. The IXBH12N300 offers similar technology but with lower current ratings.
