IXBK64N250

IXBK64N250

$123.28
  • Description:IGBT 2500V 75A TO-264AA
  • Series:-

SKU:723b02efa799 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 2500V 75A TO-264AA
  • Series:-
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):2500 V
  • Current - Collector (Ic) (Max):75 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 64A
  • Power - Max:735 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-264-3, TO-264AA
  • Supplier Device Package:TO-264AA
  • Grade:-
  • Qualification:-

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IXBK64N250

Overview

The IXBK64N250 is a monolithic bipolar MOS transistor manufactured by IXYS. It features a high blocking voltage and low switching losses, designed for high current handling capability. The device includes an integrated anti-parallel diode to enhance performance in switching applications. Constructed with silicon technology, it offers high power density and requires low gate drive requirements. This component is suitable for demanding power electronics environments where efficiency and robustness are critical.

Feature Summary

  • High blocking voltage capability
  • Low switching losses
  • High current handling capability
  • Integrated anti-parallel diode

Applications

  • Switch-mode power supplies
  • Resonant-mode power supplies
  • Uninterrupted power supplies (UPS)
  • Capacitor discharge circuits
  • Laser generators

Part Context

The IXBK64N250 belongs to the IXBK series of high-voltage BiMOSFETs from IXYS Corporation. These devices are engineered for high-performance power conversion applications. The series is known for combining IGBT-like conduction characteristics with MOSFET-like switching speeds, optimized for industrial and commercial power systems requiring reliable high-voltage operation.

IXBK64N250IXBK64N250
$123.28
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