SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXBK64N250 is a monolithic bipolar MOS transistor manufactured by IXYS. It features a high blocking voltage and low switching losses, designed for high current handling capability. The device includes an integrated anti-parallel diode to enhance performance in switching applications. Constructed with silicon technology, it offers high power density and requires low gate drive requirements. This component is suitable for demanding power electronics environments where efficiency and robustness are critical.
The IXBK64N250 belongs to the IXBK series of high-voltage BiMOSFETs from IXYS Corporation. These devices are engineered for high-performance power conversion applications. The series is known for combining IGBT-like conduction characteristics with MOSFET-like switching speeds, optimized for industrial and commercial power systems requiring reliable high-voltage operation.