IXBR42N170

IXBR42N170

  • Description:IGBT 1700V 57A ISOPLUS247
  • Series:BIMOSFET™

SKU:eaa97119bc42 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT 1700V 57A ISOPLUS247
  • Series:BIMOSFET™
  • Mfr:IXYS
  • Package:Tube
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):57 A
  • Current - Collector Pulsed (Icm):300 A
  • Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 42A
  • Power - Max:200 W
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:188 nC
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):1.32 µs
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:ISOPLUS247™
  • Grade:-
  • Qualification:-

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IXBR42N170

Overview

The IXBR42N170 is a high-performance IGBT module designed for industrial power conversion applications. It integrates an N-channel Insulated Gate Bipolar Transistor with a fast recovery anti-parallel diode in a single package. The device features a nominal collector current of 42 Amperes and supports a maximum collector-emitter voltage of 1700 Volts. This configuration provides robust switching capabilities and low conduction losses, making it suitable for demanding inverter topologies.

Feature Summary

  • Integrated anti-parallel diode for efficient freewheeling operation
  • High voltage blocking capability for grid-connected systems
  • Optimized thermal design for reliable heat dissipation

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Solar inverters

Procurement Notes

Verify the specific ordering suffix to confirm pinout compatibility and terminal plating requirements. Ensure the selected variant matches the required isolation voltage and mounting torque specifications for the target application. Cross-reference the datasheet revision date to confirm updated electrical characteristics before finalizing procurement.

Selection Notes

Evaluate the thermal resistance parameters against the expected junction temperature limits under peak load conditions. Consider the switching frequency requirements to ensure the integrated diode reverse recovery characteristics meet system efficiency targets. Verify that the gate drive circuitry aligns with the specified threshold voltages and recommended operating ranges.

Part Context

This component belongs to IXYS' modular IGBT lineup, engineered for medium-power industrial applications. It complements other modules in the series by offering a balance between current handling capacity and voltage rating. The design focuses on minimizing switching losses while maintaining high reliability in harsh environmental conditions typical of industrial power electronics.

Replacement Considerations

Direct substitutes may include models from the same manufacturer with identical pinouts and electrical ratings. Verify mechanical footprint and thermal interface dimensions when considering alternative brands. Ensure that any replacement part maintains equivalent or superior switching speed and thermal performance characteristics.

IXBR42N170IXBR42N170

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