IXBT12N300HV

Overview

The IXBT12N300HV is a high-voltage Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and features the BIMOSFET architecture within a D3PAK-3 (TO-268-3) surface-mount package. The device supports a maximum collector-emitter voltage of 3 kV and delivers a continuous collector current of 30 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.2 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation capacity of 160 W. It operates reliably between -55°C and +150°C.

Feature Summary

• High Voltage Capability: Designed for extreme voltage applications with a 3 kV collector-emitter breakdown rating.
• BIMOSFET Technology: Integrates monolithic bipolar MOS transistor structure for enhanced gain and performance.
• Surface Mount Design: Utilizes the D3PAK-3 (TO-268-3) package for efficient thermal management and PCB integration.

Applications

• High voltage power supply circuits
• Industrial motor drive systems
• Inverter topologies requiring high blocking voltage

Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm RoHS compliance status via official documentation before procurement. Ensure storage conditions respect humidity sensitivity levels specified in the datasheet. Validate that the TO-268-3 footprint matches your PCB design requirements. Request batch-specific test reports if required for critical industrial or medical applications.

Selection Notes

Select this component when a single N-channel IGBT with 3 kV blocking capability is required. The 30 A continuous current rating suits moderate power applications. Consider the 3.2 V saturation voltage for conduction loss calculations. The TO-268-3 package offers a balance between thermal performance and mounting density. Verify gate drive compatibility with the specified ±20 V limits.

Part Context

This part belongs to the IXYS Very High Voltage series, specifically utilizing the BIMOSFET trademarked technology. It is designed for robust operation in demanding environments. The silicon-based construction ensures reliability under high electric fields. The product line targets applications where standard voltage devices are insufficient.

Replacement Considerations

Direct substitutes must match the 3 kV rating, TO-268-3 package, and similar current capabilities. Check datasheets for equivalent saturation voltages and thermal resistance values. Verify pinout compatibility to ensure seamless integration without circuit redesign.