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Product Detailed Parameters
- Description：IGBT 1700V 80A TO-268
- Series：BIMOSFET™
- Mfr：IXYS
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 42A
- Power - Max：360 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：188 nC
- Td (on/off) @ 25°C：37ns/340ns
- Test Condition：850V, 42A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
- Supplier Device Package：TO-268
- Grade：-
- Qualification：-
Download product information
Overview
The IXBT42N170-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and features the BIMOSFET trademark architecture. The component is housed in a D3PAK-3 (TO-268-3) surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 1.7 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2.8 V and supports a power dissipation of 360 W. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- High-voltage blocking capability suitable for demanding power switching applications
- Integrated BIMOSFET structure for enhanced gate control and performance
- Surface-mount design facilitating automated assembly processes
Applications
- Industrial motor drives
- Uninterruptible power supplies
- Inverter circuits
Procurement Notes
Verify the specific suffix against official manufacturer documentation, as standard listings may not explicitly confirm the 'TRL' designation for this part number. Confirm RoHS compliance status via the datasheet. Ensure the ordering quantity aligns with reel packaging requirements if applicable. Cross-reference the Mouser catalog entry for accurate identification before procurement.
Selection Notes
Select this component for high-voltage applications requiring robust current handling in a compact surface-mount form factor. The 1.7 kV rating provides significant headroom for industrial systems. Consider the thermal management requirements associated with the 360 W power dissipation capability. Verify that the TO-268-3 footprint matches the target PCB layout constraints.
Part Context
This IGBT belongs to the IXYS BIMOSFET family, characterized by integrated gate drive features. The series includes various current ratings within the same voltage class. The D3PAK-3 package is common for medium-to-high power SMT applications. This specific model targets markets requiring reliable switching performance under high-stress conditions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's cross-reference guide or datasheet for equivalent components.
