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Product Detailed Parameters
- Description：IGBT NPT 1200V 60A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：76 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 30A
- Power - Max：300 W
- Switching Energy：4.6mJ (on), 3.4mJ (off)
- Input Type：Standard
- Gate Charge：120 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 30A, 47Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXDH30N120 is a high-voltage N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Non-Punch-Through (NPT) technology and features an optional ultra-fast diode within the same package. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 60 A at 25°C. Typical saturation voltage is 2.4 V, with rated turn-on time of 170 ns and rated turn-off time of 570 ns. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Non-Punch-Through (NPT) IGBT technology for robust performance
- Square Reverse Bias Safe Operating Area (RBSOA) without latch-up risk
- High short-circuit capability ensuring system reliability
- Positive temperature coefficient facilitating easy parallel operation
Applications
- AC motor speed control systems
- DC servo and robot drives
- DC choppers and power converters
- Uninterruptible Power Supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified agents. Confirm RoHS compliance status and specific packaging details against the official datasheet prior to purchase. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during transit and installation.
Selection Notes
Select this component for applications requiring high voltage blocking and moderate current switching. The integrated ultra-fast diode option simplifies circuit design for half-bridge configurations. Consider thermal management requirements due to the 60 A current rating and ensure gate drive voltages remain within specified limits to maintain optimal switching characteristics.
Part Context
This part belongs to IXYS's high-voltage IGBT portfolio, designed for industrial power electronics. It complements other IXYS devices like the IXGH series by offering integrated diode options in standard packages. The NPT technology distinguishes it from trench-gate variants, providing superior short-circuit ruggedness suitable for demanding industrial environments.
Replacement Considerations
Direct replacements may include parts from the IXDH series with similar voltage and current ratings. Verify pinout compatibility and thermal resistance values when substituting. Cross-reference with IXYS's GenX3 or XPT technologies if lower switching losses are required, though package dimensions must match the existing PCB footprint.
