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The IXDP20N60B is a high-voltage NPT IGBT with an optional ultra-fast diode, housed in an international standard TO-220AB package. It features a collector-emitter voltage (VCES) of 600 V and a continuous collector current (IC25) of 32 A at 25°C. The typical saturation voltage (VCE(sat)) is 2.2 V at IC = 20 A and VGE = 15 V. Switching characteristics include a turn-on energy (Eon) of 0.9 mJ and turn-off energy (Eoff) of 0.4 mJ under specified conditions. The device supports short circuit capability for 10 µs and operates within a junction temperature range of -55°C to +150°C.
Verify component authenticity through authorized Littelfuse or IXYS distributors. Confirm datasheet revision status as the document indicates phase-out status. Ensure thermal interface materials match the specified RthJC values for proper heat dissipation. Validate that the TO-220AB mounting torque remains within the 0.4 to 0.6 Nm range during assembly.
Select this component for applications requiring robust short-circuit handling and low tail current. Consider the 600 V rating and 32 A current capacity for medium-power inversion tasks. Evaluate the thermal resistance parameters against your heatsink design to ensure junction temperatures remain within the +150°C limit under continuous operation.
The IXDP20N60B belongs to the IXDP series of high-speed, low saturation voltage IGBTs manufactured by IXYS, now part of Littelfuse. This series utilizes Non-Punch Through (NPT) technology to deliver high power density and space savings compared to older generation devices. The TO-220AB package provides a standardized footprint for industrial power electronics designs.
The datasheet explicitly marks this component as Phase-Out. Designers should consult official Littelfuse documentation for direct cross-references or next-generation replacements within the IXYS discrete IGBT portfolio before finalizing new designs.