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Product Detailed Parameters
- Description：IGBT NPT 1200V 60A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 40A
- Power - Max：300 W
- Switching Energy：6.1mJ (on), 3mJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：-
- Test Condition：600V, 40A, 39Ohm, 15V
- Reverse Recovery Time (trr)：180 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXEH40N120D1 is a single NPT3 IGBT with an integrated HiPerFRED diode in a TO-247AD package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 60 A at 25°C. The device exhibits a typical saturation voltage of 2.4 V and a forward voltage of 2.6 V for the diode. Thermal resistance from junction to case is 0.42 K/W for the IGBT and 1.0 K/W for the diode.
Feature Summary
- NPT3 IGBT technology providing low saturation voltage and positive temperature coefficient for easy paralleling
- Integrated fast reverse recovery HiPerFRED diode with low operating forward voltage and leakage current
- Short tail current optimized for performance in resonant circuits
Applications
- AC drives
- DC drives and choppers
- Uninterruptible power supplies (UPS)
- Switched-mode and resonant-mode power supplies
- Inductive heating cookers
Procurement Notes
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches TO-247AD outline dimensions. Ensure thermal interface material compatibility with specified junction-to-case thermal resistance values. Validate electrical parameters within datasheet limits before integration into circuit designs.
Selection Notes
Select this component for high-voltage applications requiring robust switching characteristics. The positive temperature coefficient facilitates parallel operation without complex current balancing. Consider the integrated diode's reverse recovery properties for resonant topologies. Evaluate thermal management requirements based on the specific junction-to-case resistance values provided.
Part Context
This part belongs to the IXYS IXEH series, utilizing NPT3 technology. It combines an insulated gate bipolar transistor with a freewheeling diode in a single industry-standard through-hole package. The design targets industrial power conversion systems requiring reliable high-voltage switching capabilities.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. Verify pinout compatibility and thermal resistance values when considering alternative manufacturers' components for equivalent voltage and current ratings.
FAQ
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCES) is rated at 1200 V.
Does the device include an integrated diode?
Yes, the D1 suffix indicates the inclusion of an optional HiPerFRED diode with fast reverse recovery characteristics.
What is the recommended mounting torque?
The recommended mounting torque for the TO-247AD package is between 0.8 and 1.2 Nm.
