SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXEL40N400 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 4 kV and a continuous collector current of 40 A at 25°C, with a peak pulsed current capability of 90 A. The device exhibits a collector-emitter saturation voltage of 3.2 V and a power dissipation rating of 380 W. It operates within a temperature range of -40°C to +125°C. Packaged in an ISOPLUS264-3 through-hole housing, the component includes an electrically isolated tab for efficient thermal management and high-voltage isolation.
Verify the specific ordering suffix against the official IXYS datasheet to confirm exact electrical tolerances and packaging variations. Ensure the procurement channel provides valid traceability documentation. Confirm RoHS compliance status directly from the manufacturer's latest release notes before finalizing orders.
Select this component when system requirements demand a 4 kV voltage rating combined with moderate current handling. The ISOPLUS264-3 package facilitates direct heatsink mounting while maintaining electrical isolation. Evaluate thermal resistance parameters to ensure adequate cooling solutions are integrated into the design for reliable operation at maximum load conditions.
This IGBT belongs to the high-voltage discrete transistor category within the IXYS portfolio. It is designed for applications requiring significant voltage isolation and robust switching performance. The component serves as a critical switching element in power conversion systems where reliability under high stress conditions is paramount.
Cross-reference with other 4 kV IGBTs in the ISOPLUS264-3 package. Verify pinout compatibility and thermal characteristics before substitution. Consult the official IXYS replacement guide for approved equivalents.