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IXFA130N10T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Littelfuse Inc.. Its product description is MOSFET N-CH 100V 130A TO263. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for IXFA130N10T
- Description：MOSFET N-CH 100V 130A TO263
- Series：HiPerFET™, Trench
- Mfr：Littelfuse Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9.1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：104 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：5080 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：360W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TO-263AA (IXFA)
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for IXFA130N10T
Single FETs, MOSFETs Overview
The IXFA130N10T is a TrenchMV Power MOSFET from the HiperFET family, manufactured by IXYS Corporation. It is an N-Channel Enhancement Mode device rated for avalanche operation with a fast intrinsic diode. Key electrical characteristics include ultra-low on-resistance and low package inductance to facilitate easy driving and protection. The component supports operating temperatures up to 175 °C, enabling high power density and space savings in compact designs.
Single FETs, MOSFETs Feature Summary
- Unclamped Inductive Switching (UIS) rated for robust switching performance
- Fast intrinsic diode for efficient synchronous rectification
- Low package inductance design simplifies circuit protection and drive requirements
Single FETs, MOSFETs Applications
- Automotive motor drives and ABS systems
- DC/DC converters and off-line UPS systems
- Primary switch for 24V and 48V power systems
- Distributed power architectures and VRMs
- High current switching applications
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer designation as IXYS Corporation or its successor entities, as Littelfuse acquired IXYS. Confirm that the specific part number matches the TrenchMV HiperFET series specifications. Ensure compatibility with automotive-grade reliability standards if used in vehicle applications. Check for any updated datasheet revisions that may affect thermal or electrical parameters.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high power density and efficient switching in automotive or industrial environments. The 175 °C operating temperature rating allows for reduced heatsinking compared to lower-rated devices. The UIS rating provides resilience against inductive load transients. Consider the low on-resistance for minimizing conduction losses in high-current paths.
Single FETs, MOSFETs Part Context
This device belongs to the TrenchMV Power MOSFET family, specifically the HiperFET line designed for high-efficiency power conversion. It utilizes advanced trench technology to achieve superior on-resistance per unit area. The product is intended for use in demanding power electronics where size, weight, and thermal performance are critical constraints.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference data through official manufacturer channels before substitution.
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