IXFB38N100Q2

Single FETs, MOSFETs Overview

The IXFB38N100Q2 is an N-Channel Enhancement Mode Power MOSFET from the HiPerFET family, manufactured by IXYS. It features a TO-247 package and operates with a drain-source voltage of 1000V and a continuous drain current of 38A at 25°C. The device exhibits a maximum on-resistance of 0.26 Ohms and supports junction temperatures up to +175°C. Key electrical characteristics include a gate threshold voltage range of 3V to 5V and a total gate charge of 90nC. Thermal performance is defined by a maximum power dissipation of 350W.

Single FETs, MOSFETs Feature Summary

• Double metal process architecture for low gate resistance
• Unclamped Inductive Switching (UIS) rated capability
• High dV/dt tolerance and low reverse recovery charge
• MiniBLOC construction with aluminum nitride isolation

Single FETs, MOSFETs Applications

• DC-DC converters
• Switched-mode power supplies
• Resonant-mode power supplies
• DC choppers
• Pulse generators

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against the manufacturer's official datasheet to confirm pinout compatibility and thermal specifications. Ensure the component meets RoHS directives if required by your design. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche energy handling and fast switching speeds. The low intrinsic gate resistance and high dV/dt rating make it suitable for resonant topologies where snubber losses must be minimized. Evaluate thermal management requirements based on the specified power dissipation limits in your enclosure.

Single FETs, MOSFETs Part Context

This device belongs to the HiPerFET series, designed for high-efficiency power conversion. It utilizes advanced silicon planar technology to achieve low conduction losses while maintaining high blocking voltage capabilities. The miniBLOC package provides superior thermal conductivity compared to standard TO-247 packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct replacements within the IXYS IXFN or IXFH series that share identical pinouts and electrical ratings. Verify that any substitute maintains the same UIS rating and thermal impedance characteristics to ensure circuit reliability without redesign.