IXFH23N60Q

Description：MOSFET N-CH 600V 23A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:7eaa5767da69 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFH23N60Q is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 600V 23A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH23N60Q

Description：MOSFET N-CH 600V 23A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：320mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：3300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：400W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH23N60Q

IXFH23N60Q

Single FETs, MOSFETs Overview

The IXFH23N60Q is a single N-channel enhancement mode power MOSFET from the HyperFET series, manufactured by IXYS. It utilizes silicon technology and is housed in a TO-247-3 through-hole package. The device features a drain-source breakdown voltage of 600 V and supports a continuous drain current of 23 A. Its maximum on-resistance is specified at 320 mOhms. The component operates within a temperature range of -55 C to +150 C, with a power dissipation rating of 400 W. Gate-source voltage limits are ±30 V.

Single FETs, MOSFETs Feature Summary

HyperFET technology for optimized performance
Avalanche rated capability
Fast intrinsic diode

Single FETs, MOSFETs Applications

High frequency switching applications
Power conversion circuits
Motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure authenticity. Confirm that the physical marking matches the official datasheet specifications exactly. Check for any signs of mechanical damage or lead contamination before integration into the circuit design.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with high voltage tolerance is required. The TO-247-3 package facilitates effective thermal management for moderate power levels. Ensure the application demands align with the 600V rating and 23A current capacity constraints.

Single FETs, MOSFETs Part Context

This part belongs to the IXFH23N60 series of power MOSFETs. It represents a standard offering from IXYS for general-purpose high-voltage switching tasks. The HyperFET branding indicates adherence to specific internal quality and performance standards defined by the manufacturer.