IXFH80N10

$6.45

Description：MOSFET N-CH 100V 80A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube

SKU:3dd0fc687280 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFH80N10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 100V 80A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFH80N10

Description：MOSFET N-CH 100V 80A TO247AD
Series：HiPerFET™
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：12.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id：4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs：180 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD (IXFH)
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for IXFH80N10

IXFH80N10

Single FETs, MOSFETs Overview

The IXFH80N10 is an N-channel enhancement mode MOSFET from the HiPerFET series, manufactured by IXYS. It features a TO-247-3 through-hole package and silicon technology. Key electrical parameters include a drain-source voltage (Vds) of 100 V, a continuous drain current (Id) of 80 A, and a maximum on-resistance (Rds(on)) of 12.5 mΩ at 10 V gate drive. The device supports a gate-source voltage range of ±20 V, operates within a temperature range of -55°C to +150°C, and has a power dissipation rating of 300 W.

Single FETs, MOSFETs Feature Summary

High-current capability with 80 A continuous drain current rating
Low on-resistance for efficient power switching
Robust thermal performance in TO-247-3 package

Single FETs, MOSFETs Applications

DC-DC converters
Motor control circuits
Power supply units

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official IXYS documentation due to the Not Recommended for New Designation status. Confirm package integrity and pin alignment upon receipt. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet. Cross-reference part numbers carefully as obsolete components may have limited availability or require alternative sourcing strategies.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high current handling at low voltage levels. The 100 V rating suits low-voltage DC systems. Consider the 80 A capacity for heavy-load scenarios. Evaluate thermal management requirements given the 300 W dissipation rating. Verify compatibility with existing gate drive voltages, specifically the 10 V requirement for optimal Rds(on) performance.

Single FETs, MOSFETs Part Context

The IXFH80N10 belongs to the HiPerFET family of power MOSFETs designed for high-efficiency switching applications. Manufactured by IXYS Corporation, it utilizes advanced silicon planar technology. The component is housed in a standard TO-247-3 leaded package suitable for through-hole mounting. This series is engineered to minimize conduction losses while maintaining robust switching characteristics.