IXFN55N50F

Description：MOSFET N-CH 500V 55A SOT227B
Series：HiPerFET™, F Class
Mfr：IXYS
Package：Tube

SKU:41eb0fb284b3 Category: Single FETs, MOSFETs Brand: IXYS

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Product introduction

IXFN55N50F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET N-CH 500V 55A SOT227B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IXFN55N50F

Description：MOSFET N-CH 500V 55A SOT227B
Series：HiPerFET™, F Class
Mfr：IXYS
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：85mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id：5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs：195 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6700 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：600W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Supplier Device Package：SOT-227B
Package / Case：SOT-227-4, miniBLOC

Single FETs, MOSFETs datasheet and documents for IXFN55N50F

IXFN55N50F

Single FETs, MOSFETs Overview

The IXFN55N50F is an N-channel enhancement mode MOSFET module from the HiPerFET F-Class series. It features a 500V drain-source voltage rating and a continuous drain current of 55A. The device utilizes Si technology with a SOT-227-4 package for screw mount installation. Key electrical parameters include a maximum on-state resistance of 85mΩ at 10V gate drive, a gate-source voltage range of ±30V, and a power dissipation capacity of 600W. It operates within a temperature range of -55°C to +150°C and supports switching frequencies up to 500kHz.

Single FETs, MOSFETs Feature Summary

HiPerRF capable design optimized for high-frequency operation
Low on-state resistance for efficient power handling
Robust thermal performance in industrial environments

Single FETs, MOSFETs Applications

Fuel/hybrid military UAV systems
Semiconductor switch applications
Surge protection circuits
Rectification applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Ensure the specific suffix 'F' matches the required HiPerRF capability. Check for obsolete status indicators as some listings may reflect end-of-life stages. Validate package integrity upon receipt.

Single FETs, MOSFETs Selection Notes

Select this module for applications requiring high-frequency switching capabilities up to 500kHz. The 55A current rating suits moderate-to-high power density designs. Consider the SOT-227-4 package for screw-mount thermal management. Compare against standard HiPerFET variants if HiPerRF performance is not critical.

Single FETs, MOSFETs Part Context

Part of the IXYS HiPerFET F-Class family, designed for advanced power conversion. The F-Class designation indicates enhanced RF performance compared to standard variants. This module integrates silicon technology for reliable operation in demanding electronic systems.

Single FETs, MOSFETs Replacement Considerations

Check for IXTQ44N50P or IXTX46N50L if lower current ratings are acceptable. Verify pin compatibility before substituting with other TO-247 or SOT-227 packages. Consult datasheets for exact Rds(on) and Qg differences.