IXFT15N100Q

Single FETs, MOSFETs Overview

The IXFT15N100Q is an N-channel enhancement-mode Power MOSFET from the IXYS HiperFET Q3-Class series. It features a 1 kV drain-source voltage rating and a continuous drain current of 15 A. The device utilizes a TO-268 (D2PAK) surface-mount package with a flange for thermal management. Key electrical parameters include a maximum on-resistance of 470 mΩ at Vgs = 10 V, a typical gate charge of 115 nC, and a power dissipation capability of 360 W. It operates within a temperature range of -55°C to +150°C junction temperature.

Single FETs, MOSFETs Feature Summary

• HiperFET Q3-Class technology providing optimized switching performance and low conduction losses
• Avalanche-rated construction designed to withstand repetitive avalanche energy events
• Integrated fast recovery body diode suitable for hard-switching applications
• Flange-mounted D2PAK package enabling efficient heat transfer to heatsinks

Single FETs, MOSFETs Applications

• High-frequency switch-mode power supplies
• Motor control inverters and drives
• Industrial AC/DC and DC/DC converters
• Uninterruptible power supply (UPS) systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and tape-and-reel or tube packaging configuration against the manufacturer's latest datasheet before ordering. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary by region. Ensure the procurement documentation matches the exact part number to avoid receiving obsolete or functionally different variants.

Single FETs, MOSFETs Selection Notes

Select this component when a 1 kV rating and approximately 15 A continuous current are required in a surface-mount form factor. Compare the 470 mΩ on-resistance against alternative packages like TO-247 if higher current handling is needed. Evaluate the gate charge requirements against the driver capabilities to ensure adequate switching speeds without excessive drive losses.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiperFET family, which focuses on high-voltage silicon MOSFETs for power conversion. The Q3-Class designation indicates a generation optimized for lower gate charge and faster switching compared to earlier iterations. It serves as a surface-mount alternative to through-hole devices like the IXFH series, offering similar electrical characteristics in a compact footprint.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include the IXFK15N100Q3 (TO-264 through-hole) for pin-compatible mounting adjustments. For surface-mount equivalents, consider the IXTH15N100Q3. Verify that any substitute maintains the 1 kV rating, 15 A current capacity, and compatible Rds(on) specifications.