IXFX180N085

Single FETs, MOSFETs Overview

The IXFX180N085 is an N-channel enhancement mode power MOSFET manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-247-3 (PLUS247) through-hole package. The device features a drain-source breakdown voltage of 85 V and supports a continuous drain current of 180 A at case temperature. Key electrical parameters include a maximum on-resistance of 5.6 mΩ, a gate-source voltage limit of ±20 V, and a threshold voltage of 5 V. The total gate charge is specified at 345 nC. Thermal performance includes a maximum power dissipation of 560 W at case temperature, with an operating temperature range spanning from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• High current handling capability with 180 A continuous drain current rating
• Low on-state resistance for efficient power conduction
• Robust thermal management suitable for high-power applications
• Enhanced mode operation with standard gate drive requirements

Single FETs, MOSFETs Applications

• DC-DC converters
• Motor control circuits
• Power supply switching stages

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and manufacturer documentation to confirm exact electrical tolerances and thermal characteristics before integration. Ensure that the TO-247-3 package mounting requirements align with the target PCB design and thermal interface specifications. Cross-reference official replacement lists if sourcing from alternative distributors to maintain component consistency.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current capacity at low voltage levels. The 85 V rating and 180 A current capability make it suitable for low-side switching applications. Consider the 5.6 mΩ on-resistance for efficiency calculations and ensure adequate heatsinking to manage the 560 W power dissipation rating under thermal constraints.

Single FETs, MOSFETs Part Context

This part belongs to the IXYS HiPerFET family of power MOSFETs, designed for high-efficiency switching applications. The TO-247-3 package provides a balance between current handling and thermal performance. As a single N-channel device, it is commonly used in bridge configurations or standalone switching roles within industrial and automotive power electronics systems.

Single FETs, MOSFETs Replacement Considerations

Consult official IXYS substitution guides for verified alternatives. Generic equivalents may not match the specific thermal or electrical characteristics required for high-current applications.