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The IXG65I3300KN is a single NPT (Non-Punch-Through) IGBT from IXYS, housed in the ISOPLUS264HV-3 disc package. It features a collector-emitter breakdown voltage of 3.3 kV and a continuous collector current of 85 A at 25°C. The device exhibits a maximum collector-emitter saturation voltage of 2.8 V. Designed for high-voltage applications, it utilizes advanced NPT technology to ensure robust performance under extreme electrical stress conditions.
Verify the specific suffix and revision level against the manufacturer's latest datasheet to ensure compatibility with design requirements. Confirm RoHS compliance status through official documentation. Check for any recent product change notices or lifecycle updates directly from IXYS before finalizing procurement plans.
Select this component for applications requiring high voltage isolation and moderate current handling in a disc form factor. Ensure the cooling solution supports the thermal characteristics of the ISOPLUS264HV-3 package. Verify that the gate drive circuitry is compatible with the switching characteristics of NPT IGBTs to optimize efficiency and minimize switching losses.
This part belongs to IXYS' high-voltage IGBT portfolio, specifically utilizing NPT technology which offers improved ruggedness compared to punch-through designs. The ISOPLUS264HV-3 package is standard for medium-to-high power discrete modules, providing a balance between electrical insulation and thermal dissipation capabilities for industrial-grade electronics.
The maximum collector-emitter breakdown voltage (VCEO) is 3.3 kV.
It uses the ISOPLUS264HV-3 disc package.
It is a single IGBT configuration.