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Product Detailed Parameters
- Description：IGBT 600V 24A TO-263AA
- Series：HiPerFAST™
- Mfr：IXYS
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：24 A
- Current - Collector Pulsed (Icm)：48 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 12A
- Power - Max：100 W
- Switching Energy：500µJ (off)
- Input Type：Standard
- Gate Charge：32 nC
- Td (on/off) @ 25°C：20ns/150ns
- Test Condition：480V, 12A, 18Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：TO-263AA
- Grade：-
- Qualification：-
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Overview
The IXGA12N60B is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 24 A at 25°C. The device utilizes a silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. Key electrical parameters include a gate-emitter voltage range of -20 V to +20 V, an operating temperature range from -55°C to +150°C, and a saturation voltage characteristic associated with its series specifications.
Feature Summary
- Single configuration IGBT design for discrete switching applications
- Surface-mount D2PAK-3 package optimized for automated assembly
- Silicon-based construction supporting high-voltage operation
Applications
- Industrial motor drives
- Power supply circuits
- Inverter systems
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation. Check for obsolescence notices or lifecycle changes from the manufacturer. Ensure storage conditions meet semiconductor handling standards. Validate pinout compatibility during integration planning.
Selection Notes
Evaluate thermal management requirements given the TO-263-3 package constraints. Consider gate drive voltage limits within the specified +/- 20 V range. Assess switching frequency capabilities against application needs. Review saturation voltage characteristics for efficiency calculations. Compare alternative packages if higher current density is required.
Part Context
This component belongs to the IXGA12N60 series of IGBTs produced by IXYS. It represents a standard discrete power transistor solution designed for medium-power switching tasks. The series typically targets industrial and consumer electronics markets requiring reliable high-voltage control.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source data. Consult manufacturer cross-reference guides for potential equivalents.
