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The IXGA20N120A3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes silicon technology and belongs to the GenX3 product family. The device is housed in a D2PAK-3 (TO-263-3) surface-mount package. Key electrical ratings include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 80 A at 25°C. The typical collector-emitter saturation voltage is 2.7 V, with a power dissipation capacity of 180 W. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against official datasheets to confirm reel packaging and tape specifications. Ensure the component matches the required voltage and current ratings for the target circuit design. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability status before finalizing procurement orders.
Select this component when a surface-mount IGBT with 1.2 kV blocking capability is required. The D2PAK-3 package suits automated assembly processes. Evaluate thermal management requirements based on the 180 W power dissipation rating. Confirm that the 80 A continuous current rating aligns with the application's peak load demands.
This device is part of IXYS's GenX3 series of IGBTs, which are engineered for improved efficiency compared to previous generations. The series targets medium-power applications requiring robust switching characteristics. The TO-263-3 package provides a balance between thermal performance and compact footprint for industrial electronics.
Consult official substitution guides for equivalent devices from IXYS or other manufacturers. Verify pin compatibility and electrical parameter alignment before replacing the original component in existing designs.