IXGA30N120B3-TRL

IXGA30N120B3-TRL

$4.85
  • Description:IGBT PT 1200V 60A TO-263
  • Series:GenX3™

SKU:6f9d2470cc83 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT PT 1200V 60A TO-263
  • Series:GenX3™
  • Mfr:IXYS
  • Package:Tape & Reel (TR)
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:3.5V @ 15V, 30A
  • Power - Max:300 W
  • Switching Energy:3.47mJ (on), 2.16mJ (off)
  • Input Type:Standard
  • Gate Charge:87 nC
  • Td (on/off) @ 25°C:16ns/127ns
  • Test Condition:960V, 30A, 5Ohm, 15V
  • Reverse Recovery Time (trr):37 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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IXGA30N120B3-TRL

Overview

The IXGA30N120B3-TRL is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from the GenX3 series, manufactured by IXYS. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device supports a maximum collector-emitter voltage of 1.2 kV and delivers a continuous collector current of 60 A at 25°C, with a peak pulsed current capacity of 150 A. It features a typical collector-emitter saturation voltage of 2.96 V and a power dissipation rating of 300 W. The component operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

  • Incorporates GenX3 trench gate technology for optimized switching performance and low conduction losses.
  • Designed for robust operation with high short-circuit capability and thermal stability.
  • Features a single configuration suitable for compact surface-mount circuit designs.

Applications

  • High-frequency switch-mode power supplies
  • Motor control drives and inverters
  • Induction heating systems

Procurement Notes

Verify the specific suffix TRL indicates reel packaging when sourcing. Confirm RoHS compliance status through official datasheets or manufacturer declarations prior to integration. Ensure the ordering quantity aligns with the standard factory pack size of 800 units to match supply chain requirements. Cross-reference the manufacturer part number with distributor listings to confirm authenticity and availability.

Selection Notes

Select this component for applications requiring a balance of high voltage blocking capability and moderate current handling in a surface-mount form factor. The 1.2 kV rating suits medium-voltage industrial applications. Compare the 2.96 V saturation voltage against alternative devices to ensure efficiency targets are met. Consider the TO-263-3 package constraints for thermal management and PCB layout space.

Part Context

This IGBT belongs to the IXYS GenX3 family, which represents an evolution in trench gate technology designed to reduce switching losses compared to previous generations. The GenX3 series is widely utilized in power electronics where efficiency and thermal performance are critical. The specific model integrates advanced semiconductor structures to enhance reliability under dynamic operating conditions.

Replacement Considerations

Direct pin-compatible replacements may include other IXYS GenX3 devices with similar voltage and current ratings, such as the IXGH30N120B3D1, though package differences exist. Verify electrical parameters and thermal characteristics before substituting with non-IXYS brands.

IXGA30N120B3-TRLIXGA30N120B3-TRL
$4.85
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