IXGC12N60C

Overview

The IXGC12N60C is a single N-channel IGBT utilizing the HiPerFAST process and ISOPLUS247 package. It features a 600 V collector-emitter breakdown voltage (VCES) and a continuous collector current of 5 A at 25°C, increasing to 8 A at 90°C. The device has a maximum gate-emitter voltage of ±20 V and operates within a junction temperature range of -40°C to +150°C. Key electrical parameters include a typical saturation voltage (VCE(sat)) of 2.1 V at 15 V gate drive and 12 A collector current, with a total gate charge of 32 nC. Thermal resistance from junction to case is 1.6 K/W.

Feature Summary

• ISOPLUS247 package provides an electrically isolated back surface for direct mounting without insulators.
• Utilizes silicon chip on Direct-Copper-Bond substrate for high power dissipation capabilities.
• Features low collector-to-tab capacitance below 35 pF to minimize electromagnetic interference.
• Incorporates rugged polysilicon gate cell structure based on third-generation HDMOS technology.

Applications

• Power factor correction circuits
• AC motor control systems
• Switched-mode and resonant-mode power supplies
• Uninterruptible power supplies
• DC choppers

Procurement Notes

Verify component authenticity through authorized IXYS distributors or verified electronic component suppliers. Confirm datasheet revision status matches the specific manufacturing batch. Ensure storage conditions comply with moisture sensitivity level requirements prior to soldering. Validate that the ISOPLUS isolation specifications meet the thermal and electrical constraints of the target application design.

Selection Notes

Select this component when an electrically isolated mounting surface is required to simplify assembly and reduce system cost. The ISOPLUS247 package eliminates the need for separate thermal pads or insulating washers. Consider the 600 V rating and 5 A continuous current capability for medium-power switching applications requiring low conduction losses and simplified heat sink integration.

Part Context

This device belongs to the IXYS HiPerFAST family of insulated gate bipolar transistors. It utilizes the ISOPLUS247 package variant, which integrates an electrically isolated back surface. This design allows for direct mechanical attachment to heatsinks while maintaining electrical safety isolation, distinguishing it from standard TO-247 packages that require additional insulation materials.

Replacement Considerations

Refer to official IXYS documentation for qualified replacement part numbers. Verify pinout compatibility and thermal resistance values before substitution.

FAQ

What is the electrical isolation voltage of the ISOPLUS247 package?

The device provides an isolation voltage of 2500 V between the leads and the back surface.

How does the ISOPLUS247 package differ from standard TO-247 packages?

The ISOPLUS247 package features an electrically isolated back surface, allowing direct mounting to a heatsink without requiring separate insulating washers or thermal pads.

What is the maximum transient gate-emitter voltage allowed?

The maximum transient gate-emitter voltage (VGEM) is specified as ±30 V.