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The IXYS IXGH10N100A is a high-speed Insulated Gate Bipolar Transistor (IGBT) designed for medium to high power applications. It features a collector-emitter breakdown voltage of 1000 V and supports a continuous collector current of 20 A at 25°C. The device exhibits a low saturation voltage, typically 3.5 V at 25°C and up to 4.0 V under elevated temperatures. Packaged in TO-247AD-3, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific suffix 'A' against the manufacturer datasheet to confirm pinout and thermal characteristics match your design requirements. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check RoHS compliance status if environmental regulations apply to your assembly process.
Select this IGBT when a balance between low conduction loss and fast switching is required. The 1000V rating provides sufficient headroom for standard industrial bus voltages. Consider the thermal resistance and package type for heatsinking calculations. Compare gate charge parameters with driver capabilities to ensure optimal switching performance.
This component belongs to the IXGH series of high-performance IGBTs manufactured by IXYS. The series is engineered for applications requiring high voltage blocking and efficient power handling. The TO-247AD package facilitates through-hole mounting and effective heat dissipation via the drain tab.
Direct substitutes include other 1000V, 20A IGBTs in TO-247 packages such as the IXGH10N100. Verify that replacement parts maintain compatible gate threshold voltages and saturation levels to avoid redesigning the gate drive circuit.