IXGH120N30B3

Overview

The IXYS IXGH120N30B3 is a silicon N-channel Insulated Gate Bipolar Transistor (IGBT) belonging to the GenX3 family. It features a TO-247AD package with three pins and through-hole mounting. The device supports a maximum collector-emitter voltage of 300V and a continuous collector current of 120A at 25°C, with a peak pulsed current rating of 360A. Key electrical parameters include a collector-emitter saturation voltage of 1.7V and a gate-emitter leakage current of 100nA. It operates within a junction temperature range of -55°C to +175°C and dissipates up to 300W of power.

Feature Summary

• Utilizes GenX3 trench technology for optimized switching performance
• Designed for medium-speed applications with low saturation voltage
• Robust thermal handling capability for high-power density designs

Applications

• High-frequency power inverters operating between 10-50 kHz
• Motor drive systems requiring efficient switching
• Uninterruptible Power Supply (UPS) units
• Industrial welding equipment

Procurement Notes

Verify the specific suffix against official datasheets to confirm pinout and thermal characteristics. Ensure the ordering part number matches the exact GenX3 variant required for your circuit design. Cross-reference manufacturer documentation to validate RoHS compliance status and packaging type before finalizing procurement orders.

Selection Notes

Select this component for applications demanding a balance between conduction efficiency and switching speed at 300V ratings. The TO-247AD package facilitates effective heat dissipation for continuous currents up to 120A. Evaluate thermal resistance requirements against your heatsink solution to ensure operation remains within the specified 175°C junction temperature limit under load.

Part Context

This IGBT is part of IXYS's GenX3 series, engineered for medium-frequency switching applications. The series targets industries such as renewable energy conversion and industrial motor control. The TO-247AD form factor provides a standardized footprint for legacy and modern power electronics designs requiring reliable high-current switching capabilities.

Replacement Considerations

Direct substitutes may include other GenX3 devices from IXYS or equivalent 300V/120A IGBTs from manufacturers like Infineon or Mitsubishi. Verify that replacement parts match the Vce(sat), switching times, and package dimensions to maintain circuit integrity without redesigning the PCB layout.