IXGH12N60CD1

Overview

The IXGH12N60CD1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes Silicon technology and is housed in a TO-247AD-3 through-hole package. The device features a maximum collector-emitter voltage of 600V and a continuous collector current of 24A. Key electrical parameters include a saturation voltage of 2.7V and a gate-emitter voltage range of -20V to +20V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• Single N-channel IGBT configuration for power switching applications
• High voltage rating of 600V with 24A continuous current capability
• Through-hole mounting in a robust TO-247AD-3 package

Applications

• Power conversion systems
• Motor drive circuits
• Industrial power control

Procurement Notes

Verify the exact suffix CD1 against official IXYS documentation, as the provided reference data primarily lists the BD1 variant. Confirm availability status, as the referenced BD1 model is marked as obsolete. Ensure the specific part number matches design requirements before procurement.

Selection Notes

Select this component for applications requiring 600V blocking capability and moderate current handling up to 24A. Consider the TO-247AD-3 package for thermal management needs. Verify compatibility with standard gate drive voltages within the specified +/- 20V range.

Part Context

This component belongs to the IXYS IXGH series of IGBTs. These devices are designed for high-reliability power electronics. The series typically targets industrial applications where robust performance under high voltage and current conditions is required.

Replacement Considerations

Publicly confirmed substitute part numbers for the IXGH12N60CD1 were not found in the provided source material. Cross-reference with other IXGH series variants or consult manufacturer documentation for direct replacements.