SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IXYS IXGH12N90C is a single N-channel IGBT in the GenX3 series, housed in a TO-247AD package. It features a maximum collector-emitter voltage of 900V and a continuous collector current of 12A. The device operates with a gate-emitter voltage range of ±20V and supports a junction temperature up to 175°C. Key electrical parameters include a collector-emitter saturation voltage of 2.5V at 12A and a switching frequency capability of 50kHz. The component is designed for high-efficiency power conversion applications requiring robust performance.
Verify the specific suffix variant against official datasheets to confirm exact electrical ratings and pinout configuration. Ensure compatibility with existing thermal management solutions and gate drive requirements before integration into production designs.
Select this component for applications requiring high voltage blocking capability and moderate current handling. Consider the thermal resistance and package type when designing heat dissipation systems. Validate switching speed requirements against the 50kHz specification for optimal efficiency.
Part of the IXYS GenX3 IGBT family, known for advanced trench gate technology. This series targets high-efficiency power electronics, offering improved performance over previous generations in terms of switching losses and thermal durability.
Check for direct substitutes within the IXYS GenX3 lineup or comparable 900V/12A IGBTs from other manufacturers, ensuring matching voltage, current, and package specifications.