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Product Detailed Parameters
- Description：IGBT 1000V 34A TO-247AD
- Series：-
- Mfr：IXYS
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：68 A
- Vce(on) (Max) @ Vge, Ic：4V @ 15V, 17A
- Power - Max：150 W
- Switching Energy：3mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：100ns/500ns
- Test Condition：800V, 17A, 82Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IXGH17N100AU1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It features a collector-emitter breakdown voltage of 1000 V and a continuous collector current rating of 34 A at 25°C. The device utilizes the second-generation HDMOSTM process to achieve low saturation voltage for reduced conduction losses. It is housed in an isolated TO-247AD package with three pins, designed for high power density applications.
Feature Summary
- Utilizes second-generation HDMOSTM process technology for optimized performance
- Features low collector-emitter saturation voltage to minimize on-state conduction losses
- Provides high current handling capability suitable for demanding power switching tasks
- Includes an integrated anti-parallel diode within the module structure
Applications
- AC motor speed control systems
- DC servo and robot drive circuits
- Uninterruptible power supplies (UPS)
- Switch-mode and resonant-mode power supplies
Procurement Notes
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm that the specific suffix AU1 matches the required datasheet specifications for the integrated diode configuration. Ensure storage conditions comply with manufacturer guidelines to prevent moisture damage prior to soldering.
Selection Notes
Select this component when designing circuits requiring 1000 V blocking capability with moderate current ratings around 34 A. The TO-247AD package facilitates efficient thermal management via direct mounting. Consider the integrated diode characteristics if synchronous rectification or freewheeling paths are necessary in the topology.
Part Context
This IGBT belongs to the IXGH series, which employs advanced trench gate technology. The series is engineered for industrial power conversion applications. The specific model integrates a fast recovery diode, distinguishing it from standard discrete IGBTs that require external parallel diodes for inductive load commutation.
Replacement Considerations
Direct substitutes include IXGH17N100A and IXGH17N100U1. Verify pinout compatibility and thermal resistance values before implementation. Ensure replacement parts meet the same voltage and current derating requirements for the target application environment.
