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The IXYS IXGH24N60B is a single N-channel Power MOSFET belonging to the IXKH24N60 series. It features a TO-247-3 through-hole package and operates with a drain-source breakdown voltage of 600 V. The device supports a continuous drain current of 24 A at 25°C and dissipates up to 250 W of power. Key electrical parameters include a maximum on-resistance of 165 mΩ, a gate-source voltage range of ±20 V, and a threshold voltage of 2.5 V. The total gate charge is 52 nC, and it functions within a temperature range of -55°C to +150°C.
Verify component authenticity by checking manufacturer markings against official datasheets. Confirm lot codes and date codes to ensure compliance with RoHS standards. Inspect leads for damage before installation. Cross-reference part numbers carefully as suffixes may indicate specific packaging or testing variations. Validate supplier authorization status prior to purchase.
Select this component when a 600V rated MOSFET with 24A continuous current capability is required. Ensure the thermal management system can handle 250W dissipation. Verify that the driving circuit provides appropriate gate voltage levels within the ±20V limit. Consider the 165mΩ on-resistance for conduction loss calculations in the target application design.
This device is part of the IXYS IXKH24N60 series of CoolMOS transistors. These components are engineered for efficient power conversion in demanding environments. The series offers a balance of low on-resistance and fast switching speeds suitable for modern power electronics designs requiring reliable high-voltage performance.
Direct substitutes include IXXH30N60B3D1. Alternative similar devices from other manufacturers such as STMicroelectronics STGW20V60DF or STGW40H60DLFB may be considered if pin compatibility and electrical specifications align with the original design requirements.