IXGH24N60C4

Description：IGBT PT 600V 56A TO-247AD
Series：-

SKU:f86da2c0ad4d Category: Single IGBTs Brand: IXYS

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Product introduction

Product Detailed Parameters

Description：IGBT PT 600V 56A TO-247AD
Series：-
Mfr：IXYS
Package：Tube
IGBT Type：PT
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：56 A
Current - Collector Pulsed (Icm)：130 A
Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 24A
Power - Max：190 W
Switching Energy：400µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：64 nC
Td (on/off) @ 25°C：21ns/143ns
Test Condition：360V, 24A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AD
Grade：-
Qualification：-

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IXGH24N60C4

Overview

The IXGH24N60C4 is a single N-channel silicon Insulated Gate Bipolar Transistor (IGBT) from the IXYS IXGH24N60 series. It features a TO-247AD-3 through-hole package and supports a maximum collector-emitter voltage of 600 V. The device provides a continuous collector current of 56 A at 25°C and exhibits a typical collector-emitter saturation voltage of 2.28 V. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

High-gain IGBT technology for efficient switching performance
Robust thermal management capability with wide operating temperature range
Single configuration suitable for high-current power applications

Applications

Industrial motor drives
Switch-mode power supplies
Inverter circuits

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm datasheet revisions and RoHS compliance details before integration. Ensure supply chain stability as availability may be limited. Validate pinout compatibility with existing PCB footprints during design updates.

Selection Notes

Select this component for designs requiring 600V blocking capability and 56A continuous current handling in a standard TO-247AD package. Consider the 2.28V saturation voltage for conduction loss calculations. Evaluate thermal resistance requirements against the specified 150°C maximum junction temperature limit for reliable operation.

Part Context

This device belongs to the IXYS IXGH24N60 family of high-gain IGBTs. It utilizes silicon technology and is housed in a TO-247AD-3 leaded package designed for through-hole mounting. The component is categorized under IGBT modules and transistors, targeting medium-power switching applications.